5 FP106 FP107 FP108 FP1189 FP1189-PCB-1900 FP1189-PCB-900 FP125F FP1
FP Datasheet
FP1189 FP1189-PCB-1900 FP1189-PCB-900 FP125F FP125S FP150F FP150S FP1510SOT89 FP175F FP175F FP200F FP200S FP201 FP201L100 FP203 FP206 FP207
| PartNo | Manufacturer | Description |
| FP100 | Filtronic | High performance PHEMT |
| FP100 | Filtronic | High performance PHEMT |
| FP100F | VMI | 10000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
| FP100S | VMI | 10000 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
| FP101 | WJ | High dynamic range FET |
| FP101 | SANYO | PNP epitaxial planar silicon transistor + composite schottky barrier diode, DC-DC convertor application |
| FP102 | SANYO | PNP epitaxial planar silicon transistor + composite schottky barrier diode, DC-DC convertor application |
| FP103 | SANYO | PNP epitaxial planar silicon transistor + composite schottky barrier diode, DC-DC convertor application |
| FP104 | SANYO | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application |
| FP105 | SANYO | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application |
| FP106 | SANYO | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application |
| FP107 | SANYO | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application |
| FP108 | SANYO | PNP epitaxial planar silicon transistor + schottky barrier diode, DC-DC convertor application |
| FP1189 | WJ | 1/2 watt HFET |
| FP1189-PCB-1900 | WJ | 1/2 watt HFET |
| FP1189-PCB-900 | WJ | 1/2 watt HFET |
| FP125F | VMI | 12500 V rectifier stack 2.2 A forward current, 150 ns recovery time |
| FP125S | VMI | 12500 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
| FP150F | VMI | 15000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
| FP150S | VMI | 15000 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
| FP1510SOT89 | Filtronic | Low noise, high linearity packaged PHEMT |
| FP175F | VMI | 17500 V rectifier stack 2.2 A forward current, 150 ns recovery time |
| FP175F | VMI | 17500 V rectifier stack 2.2 A forward current, 150 ns recovery time |
| FP200F | VMI | 20000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
| FP200S | VMI | 20000 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
| FP201 | SANYO | NPN epitaxial planar silicon composite transistor, high-frequency amp, differential amp application |
| FP201L100 | Infineon | Differential magnetoresistive sensor |
| FP203 | SANYO | NPN/PNP epitaxial planar silicon composite transistor, push-pull circuit application |
| FP206 | SANYO | NPN/PNP epitaxial planar silicon composite transistor, push-pull circuit application |
| FP207 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications |