W4TXE0X-0D00 SPC,CIRCUIT,FUNCTION
W4TXE0X-0D00 Datasheet PDF
| Manufacturer | Packing | Description | Temperature | |
|---|---|---|---|---|
| Cree | Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
W4TXE0X-0D00 PDF | Min°C | Max°C |
- Cree W4TXE0X-0D00
Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition