W6NXD3J-0000 SPC,CIRCUIT,FUNCTION
W6NXD3J-0000 Datasheet PDF
| Manufacturer | Packing | Description | Temperature | |
|---|---|---|---|---|
| Cree | Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
W6NXD3J-0000 PDF | Min°C | Max°C |
- Cree W6NXD3J-0000
Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition